For monolithic RF spiral inductor on high-loss silicon substrate

a novel physical model is proposed

in which functions of both skin effect and proximity effect to frequency-dependent series parameters

L

s

and

R

s

are accounted in the light of modified partial equivalent element circuit methodology and

in the meanwhile

complicated eddy current losses in the substrate are captured by a full-coupled transformer loop.Up to 20GHz

the model reveals quite good accuracy within 7% with data from full-wave electromagnetic filed simulator

including equivalent inductor

L

eff

resistor

R

eff

and quality factor

Q

and

hopefully

it can be applied to further theory research and optimum design of RFIC spiral inductor on Si.