1.中国科学院上海微系统与信息技术研究所,上海200050
2.中国科学院大学,北京100049
3.上海科技大学信息科学与技术学院,上海201210
[ "伍锡安 男,1992年10月生于湖南邵阳,中国科学院大学/中国科学院上海微系统所博士研究生,研究方向为模拟/数模混合集成电路设计.E-mail:wuxa@mail.sim.ac.cn" ]
[ "章泽臣 男,1996年10月生于江苏宿迁,上海科技大学信息科学与技术学院硕士研究生,研究方向为模拟/数模混合集成电路设计." ]
[ "袁圣越 男,1986年10月生于江苏南京,硕士研究生毕业于华东师范大学,长期从事模拟/射频集成电路及系统设计的研发工作." ]
[ "田 彤(通信作者) 男,1968年生于陕西西安,博士,研究员,博士生导师.1998年至2001年先后在西安电子科技大学、新加坡南洋理工大学任副教授.2010年引进中科院上海微系统与信息技术研究所.长期从事模拟/射频集成电路及系统设计的研发工作.E-mail:tiantong@mail.sim.ac.cn" ]
收稿:2020-10-16,
修回:2021-07-07,
纸质出版:2021-11-25
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伍锡安,章泽臣,袁圣越等.一种快速建立的低噪声带隙基准源设计与实现[J].电子学报,2021,49(11):2195-2201.
WU Xi-an,ZHANG Ze-chen,YUAN Sheng-yue,et al.Design and Implementation of a Fast Set-Up and Low-Noise Bandgap Reference[J].ACTA ELECTRONICA SINICA,2021,49(11):2195-2201.
伍锡安,章泽臣,袁圣越等.一种快速建立的低噪声带隙基准源设计与实现[J].电子学报,2021,49(11):2195-2201. DOI: 10.12263/DZXB.20201143.
WU Xi-an,ZHANG Ze-chen,YUAN Sheng-yue,et al.Design and Implementation of a Fast Set-Up and Low-Noise Bandgap Reference[J].ACTA ELECTRONICA SINICA,2021,49(11):2195-2201. DOI: 10.12263/DZXB.20201143.
基于UMC 65nm CMOS工艺设计实现了一种快速建立的低噪声带隙基准源.利用工作在深线性区的MOS管实现了GΩ级别大电阻,因此仅采用5pF的电容即实现了截止频率低至32Hz的带开关低通滤波器,有效降低了带隙基准源输出噪声.有源器件的采用大大节省了芯片面积,降低了制作成本.通过采用上电延时电路去控制低通滤波器工作状态,克服了采用大阻值电阻或大容值电容低通滤波器降噪面临的缓慢建立问题,实现了快速建立.通过Spectre仿真器对电路在1.8V电源电压下进行了仿真,后仿真结果表明,电路在10kHz、100kHz、1MHz的输出噪声分别为:11.76nV/sqrtHz、1.213 nV/sqrtHz、336.8 pV/sqrtHz,电路的建立时间为1.436μs,整体功耗为104.4μW.本文设计已在实际芯片中得到应用,并取得了预期效果.
A fast set-up and low-noise bandgap reference is designed and implemented with UMC 65nm COMS process. A GΩ level resistor is realized by using a MOS transistor working in deep triode region. Therefore
only a 5pF capacitor is used to realize a switching low-pass filter with a cut-off frequency as low as 32Hz
which effectively reduces the output noise of the bandgap reference. The use of active devices greatly saves chip area and reduces manufacturing costs. A power-on delay circuit is adopted to control the working state of the low-pass filter
which overcomes the problem of slow set-up by using low-pass filters with large resistance or large capacitance capacitors to reduce noise and achieve rapid set-up. The circuit is simulated under 1.8V supply voltage by spectre simulator. The post simulation results show that the output noise of the circuit at 10kHz
100kHz
and 1MHz are 11.76nV/sqrtHz
1.213 nV/sqrtHz
336.8 pV/sqrtHz
respectively. The settling time of the circuit is 1.436μs
and the power consumption is 104.4μW.This design has been applied to the actual chips and achieved the expected effect.
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