一种适用于氮化镓半桥结构的高可靠性差分电流补偿电平移位电路
A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge
- 电子学报 2022年50卷第11期 页码：2561-2567
- 作者机构：
深圳大学电子与信息工程学院, 广东深圳 518061
- 作者简介：
[ "赵 鹏 男，1994年出生，广东省佛山市人.2018年在大连海事大学获得电子信息科学与技术学士学位，目前正在深圳大学集成电路工程专业攻读硕士学位，目前研究方向为氮化镓功率器件的驱动设计.E-mail: zhaopeng321542@163.com" ]
[ "姜 梅 女，1976年出生，四川省阆中市人.分别于2000年、2003年在华中科技大学获得微电子学与固体电子学学士、硕士学位，2012年在北京大学获得微电子学与固体电子学博士学位，同年进入深圳大学任教.目前的研究领域为高性能、低功耗模拟集成电路设计.E-mail: mjiang@szu.edu.cn" ]
- 基金信息：广东省重点科技产业质量基础共性技术研究及应用(2020B0404030004)
DOI：10.12263/DZXB.20210827
中图分类号： TN432收稿：2021-07-01，
修回：2021-09-27，
纸质出版：2022-11-25
- 稿件说明：
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赵鹏,姜梅.一种适用于氮化镓半桥结构的高可靠性差分电流补偿电平移位电路[J].电子学报,2022,50(11):2561-2567.
ZHAO Peng,JIANG Mei.A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge[J].ACTA ELECTRONICA SINICA,2022,50(11):2561-2567.
赵鹏,姜梅.一种适用于氮化镓半桥结构的高可靠性差分电流补偿电平移位电路[J].电子学报,2022,50(11):2561-2567. DOI： 10.12263/DZXB.20210827.
ZHAO Peng,JIANG Mei.A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge[J].ACTA ELECTRONICA SINICA,2022,50(11):2561-2567. DOI： 10.12263/DZXB.20210827.
摘要
为了提高氮化镓半桥结构的抗d
v
/d
t
特性，提出了一种适用于氮化镓半桥结构的高可靠性差分电流补偿新颖电平移位电路.该电路在自举电容作用下，将0V~5V输入电压转换为35V~40V输出电压，并且在浮点电压快速变化过程中，输出的驱动电压均保持稳定.电路采用电流镜结构传输信号，能够实现电平信号的快速传递
有效地减小传输延迟.对于浮点电压的快速变化导致移位电平器输出变化的问题，采用新颖的差分电流结构进行电流补偿
提高电路的抗d
v
/d
t
特性，获得高可靠性的输出电压.本电路基于标准0.35μm BCD工艺40 V的LDMOS耐压器件，对该电平移位电路在1MHz频率下进行验证.结果表明上升沿响应延迟为587.184ps，下降沿响应延迟为832.144ps，抗正的d
v
/d
t
变化为116V/ns以及对负d
v
/d
t
变化不敏感，该电路具有高速
高可靠性优点.
Abstract
In order to improve the power supply slew tolerance of the GaN half-bridge structure
a high-reliability differential current compensation level shift circuit suitable for GaN half-bridge structure is proposed. With the help of bootstrap capacitor
this circuit converts the input voltage of 0V to 5V into the output voltage of 35V to 40V and the output driving voltage remains stable during the rapid change of floating-point voltage. The circuit adopts a current mirror structure to transmit signals
which can realize the rapid transmission of level signals and effectively reduce the transmission delay. Since the rapid changing of the power supply voltage causes the output of the level shifter to change
in order to solve this issue
we propose a differential current structure
which is used for current compensation to improve the power supply slew tolerance and stabilize the output result based on the standard 0.35μm BCD(Bipolar-CMOS-DMOS) process and 40V LDMOS(Laterally Diffused Metal-Oxide Semiconductor） high voltage devices
the level shift circuit is verified at 1MHz frequency. The results show that the rising edge response delay and the falling edge response delay are 587.184ps and 832.144ps
respectively
a 116V/ns positive power-rail slew tolerance and infinite negative slew tolerance. This circuit has the advantages of high speed and high reliability.
关键词
Keywords
references
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