Si/SiC混合开关最优门极延时及其在逆变器中的应用
Optimal Gate Turn-Off Delay-Time of Si/SiC Hybrid Switch and Its Application in Inverter
- 电子学报 2023年51卷第6期 页码：1468-1473
- 作者机构：
安徽工业大学电气与信息工程学院，安徽马鞍山 243002
- 作者简介：
[ "周郁明 男，1971年5月出生，湖北武汉人.安徽工业大学电气与信息工程学院教授，硕士生导师.主要研究方向为新型半导体功率器件的设计及应用.E-mail: ymzhou@ahut.edu.cn" ]
[ "穆世路 男，1996年11月出生，安徽宿州人.安徽工业大学电气与信息工程学院硕士研究生.主要研究方向为宽禁带功率半导体器件的建模及应用.E-mail: 1964007396@qq.com" ]
- 基金信息：安徽省自然科学基金(2008085ME157);安徽高校自然科学研究项目(KJ2020A0247)
DOI：10.12263/DZXB.20211094
中图分类号： TN386;TM464收稿：2021-08-14，
修回：2022-01-08，
纸质出版：2023-06-25
- 稿件说明：
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周郁明,穆世路,杨华等.Si/SiC混合开关最优门极延时及其在逆变器中的应用[J].电子学报,2023,51(06):1468-1473.
ZHOU Yu-ming,MU Shi-lu,YANG Hua,et al.Optimal Gate Turn-Off Delay-Time of Si/SiC Hybrid Switch and Its Application in Inverter[J].ACTA ELECTRONICA SINICA,2023,51(06):1468-1473.
周郁明,穆世路,杨华等.Si/SiC混合开关最优门极延时及其在逆变器中的应用[J].电子学报,2023,51(06):1468-1473. DOI： 10.12263/DZXB.20211094.
ZHOU Yu-ming,MU Shi-lu,YANG Hua,et al.Optimal Gate Turn-Off Delay-Time of Si/SiC Hybrid Switch and Its Application in Inverter[J].ACTA ELECTRONICA SINICA,2023,51(06):1468-1473. DOI： 10.12263/DZXB.20211094.
摘要
由大电流硅绝缘栅双极型晶体管（Silicon Insulated-Gate Bipolar Transistor，Si IGBT）和小电流碳化硅金属-氧化物-半导体场效应晶体管（Silicon Carbon Metal-Oxide-Semiconductor Field-Effect Transistor，SiC MOSFET）并联构成的Si/SiC混合开关具有低成本、高效率的特点.Si/SiC混合开关门极关断延时的控制是提高混合开关效率的关键因素.本文首先研究了在不同工作电流下Si/SiC混合开关关断损耗随门极关断延时的变化，结果表明，Si/SiC混合开关有一个最优的关断延时，此时混合开关的关断损耗最低，并且最优门极关断延时随混合开关工作电流的增大而减小.将所得到的Si/SiC混合开关最优门极关断延时应用在单相全桥逆变器中，实验结果表明，逆变器的转换效率比同等条件下固定关断延时的最高转换效率提高了0.67%.
Abstract
Si/SiC hybrid switch configured by a high-current silicon insulated-gate bipolar transistor (Si IGBT) and a low-current silicon carbon metal-oxide-semiconductor field-effect transistor (SiC MOSFET) in parallel has the advantages of low cost and high efficiency. The delay time of gate turn-off is the key to improve the efficiency of Si/SiC hybrid switch. In this paper
the relationship between the turn-off power loss and the delay time of gate turn-off for Si/SiC hybrid switch with different working current has been investigated
and the result has shown that there is an optimal delay time of gate turn-off for Si/SiC hybrid switch
with this optimal delay time
Si/SiC hybrid switch can achieve minimum turn-off loss
moreover
the optimal delay time will decrease with the increasing of Si/SiC hybrid switch working current. The optimal delay time of gate turn-off for Si/SiC hybrid switch has been applied to sing-phase full bridge inverter
and the experimental result has indicated that the conversion efficiency of inverter with the optimal delay time of gate turn-off is improved by 0.67% compared with the highest conversion efficiency of inverter with fixed delay time of gate turn-off for Si/SiC hybrid switch.
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references
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