高浓度掺杂非晶铟镓锌氧化物薄膜的态密度模型研究

蔡坤林; 谢应涛; 蹇欢; 黄雁琳; 翁嘉明

doi:10.12263/DZXB.20221027

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高浓度掺杂非晶铟镓锌氧化物薄膜的态密度模型研究

学术论文 | 更新时间：2025-12-11

- 高浓度掺杂非晶铟镓锌氧化物薄膜的态密度模型研究
- Study on Density of States Model of High-Concentration Doped Amorphous Indium Gallium Zinc Oxide Thin-Film
- 电子学报 2024年52卷第5期页码：1591-1600
- 作者机构：
  
  1.重庆邮电大学电子工程系，重庆 400065
  2.上海交通大学电气工程系，上海 200240
- 作者简介：
  
  [ "蔡坤林男，1999年出生，重庆人．现为重庆邮电大学硕士研究生．主要研究方向为薄膜晶体管器件（TFT）研制及TFT建模仿真．E-mail: 1564548488@qq.com" ]
  [ "谢应涛男，1985年出生，四川达州人．博士.现为重庆邮电大学光电工程学院副教授、硕士生导师．主要研究方向为可溶液法的薄膜材料、柔性薄膜晶体管器件（TFT）研制及TFT建模仿真和TFT驱动电路设计． E-mail: xieyt@cqupt.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(61804019);重庆市教委科学技术研究项目(KJZD-K202200607);重庆市研究生科研创新项目(CYS22441)
- DOI：10.12263/DZXB.20221027
  中图分类号： TN321+.5;
- 收稿：2022-09-07，
  
  修回：2022-12-19，
  
  纸质出版：2024-05-25
- 稿件说明：
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蔡坤林,谢应涛,蹇欢,等. 高浓度掺杂非晶铟镓锌氧化物薄膜的态密度模型研究[J]. 电子学报,2024,52(05):1591-1600.

CAI Kun-lin, XIE Ying-tao, JIAN Huan, et al. Study on Density of States Model of High-Concentration Doped Amorphous Indium Gallium Zinc Oxide Thin-Film[J]. Acta Electronica Sinica, 2024, 52(05): 1591-1600.
蔡坤林,谢应涛,蹇欢,等. 高浓度掺杂非晶铟镓锌氧化物薄膜的态密度模型研究[J]. 电子学报,2024,52(05):1591-1600. DOI：10.12263/DZXB.20221027

CAI Kun-lin, XIE Ying-tao, JIAN Huan, et al. Study on Density of States Model of High-Concentration Doped Amorphous Indium Gallium Zinc Oxide Thin-Film[J]. Acta Electronica Sinica, 2024, 52(05): 1591-1600. DOI：10.12263/DZXB.20221027

摘要

针对背沟道刻蚀（Back Channel Etch，BCE）技术的非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（Thin Film Transistor，TFTs），建立了一种高浓度掺杂态密度模型（High Concentration Doping Density Of States model，HCD-DOS model），并通过数值模拟研究态密度关键参数对器件性能的影响，以此揭示a-IGZO TFTs中制备工艺对导电沟道修复的物理机理．首先，采用结合强度较高的钼/铜双层结构作为栅/源/漏电极，引入BCE方法制备了底栅顶接触（Bottom-Gate Top-Contact，BG-TC） TFTs．其次，建立了适用于BCE技术的a-IGZO TFTs的HCD-DOS模型．随后，基于TCAD（Technology Computer Aided Design）仿真器对态密度关键参数进行数值研究，结果表明，不同态密度参数对a-IGZO TFTs器件转移特性曲线、电学特性以及沟道内部电子浓度分布的影响有所差异.最后，基于HCD-DOS模型探索SiO

钝化层沉积和N

O等离子体处理对器件内部机理的影响．研究发现，N

O等离子体处理对态密度分布和沟道载流子浓度有显著影响，进而导致阈值电压正向漂移．

Abstract

A high-concentration doped density of states model (HCD-DOS model) was established for amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with back-channel etch (BCE) technology. The effect of the key parameters of the density of states on the device performance was also investigated by numerical simulation to reveal the physical mechanism of the preparation process to repair the conductive channel in a-IGZO TFTs. Firstly

the molybdenum/copper bila

yer structure with high bonding strength was used as gate/source/drain electrodes

and the bottom-gate top-contact (BG-TC) TFTs was prepared by introducing the BCE method. Secondly

the HCD-DOS model of a-IGZO TFTs suitable for BCE technology was developed. Subsequently

the key parameters of the density of states were investigated numerically based on the TCAD (Technology Computer Aided Design) simulator. The results demonstrated that different density of states parameters had different effects on the transfer characteristic curves

electrical characteristics

and electron concentration distribution inside the channel of the a-IGZO TFTs device. At last

the influence of SiO

passivation-layer deposition and N

O plasma treatment on the internal mechanism of the device was explored based on the HCD-DOS model. It was found that N

O plasma treatment had a significant effect on the density of states distribution and channel carrier concentration

which in turn caused the threshold voltage to drift.

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references

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