A Relation Model Between Integrated Circuit Yield and Reliability Based on the Defect’s Uniform Distribution[J]. Acta Electronica Sinica, 2012, 40(8): 1665-1669.
A Relation Model Between Integrated Circuit Yield and Reliability Based on the Defect’s Uniform Distribution[J]. Acta Electronica Sinica, 2012, 40(8): 1665-1669. DOI: 10.3969/j.issn.0372-2112.2012.08.027.
models on the relationship of yield and reliability deserve much attention.The impact of defects on the yield and reliability is associated not only with the particle size of it but also with the location of it on the chip.In this paper
it is analyzed that the defects at the same size in interconnect different locations affect the effective width of interconnect wires
by discussing the impact of the loss of metal in the interconnect wire on the interconnect wire itself.The average effective width of interconnect wires is given based on the uniform distribution of defects.In addition
the model on the relationship of the IC manufacturing yield and reliability is presented based on the location of defects
by referring on the existing model of estimating yield and reliability.If the processing line is stable
the rate of the product failure can be estimated effectively by the expression and the yield of the processing line
which can shorten the development period of the new products.