The integrated circuits used in aerospace can be influenced by space radiation effects

leading to some problems such as transient disturbance

data upset

performance degradation

functional failure or even destructive damage. The variety and complexity of these problems increases as the feature size of devices scales down to less than 100 nm (called as "nano-scale" in this paper). Single event effect has become a main reliability factor for space-used ICs

and brought about much challenge to radiation hardness assurance and radiation hardening. Taking nano-scale ICs as the research object

combined with recent technology progress

this paper introduces the research achievements in single event effect and hardening techniques of 65 nm ICs

including the proposed time-domain testing and analyzing method

radiation hardening techniques for single event multi-node upsets and single event transients.