Abstract：The integrated circuits used in aerospace can be influenced by space radiation effects,leading to some problems such as transient disturbance,data upset,performance degradation,functional failure or even destructive damage.The variety and complexity of these problems increases as the feature size of devices scales down to less than 100 nm (called as "nano-scale" in this paper).Single event effect has become a main reliability factor for space-used ICs,and brought about much challenge to radiation hardness assurance and radiation hardening.Taking nano-scale ICs as the research object,combined with recent technology progress,this paper introduces the research achievements in single event effect and hardening techniques of 65 nm ICs,including the proposed time-domain testing and analyzing method,radiation hardening techniques for single event multi-node upsets and single event transients.
赵元富, 王亮, 岳素格, 孙永姝, 王丹, 刘琳, 刘家齐, 王汉宁. 纳米级CMOS集成电路的单粒子效应及其加固技术[J]. 电子学报, 2018, 46(10): 2511-2518.
ZHAO Yuan-fu, WANG Liang, YUE Su-ge, SUN Yong-shu, WANG Dan, LIU Lin, LIU Jia-qi, WANG Han-ning. Single Event Effect and its Hardening Technique in Nano-scale CMOS Integrated Circuits. Acta Electronica Sinica, 2018, 46(10): 2511-2518.
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2018, Vol. 46 
