电子学报 ›› 2021, Vol. 49 ›› Issue (5): 1013-1018.DOI: 10.12263/DZXB.20200522

所属专题: 硅基半导体器件新进展

• 学术论文 • 上一篇    下一篇

标准CMOS工艺低压栅控硅发光器件设计与制备

吴克军1, 李则鹏1, 张宁1, 朱坤峰2, 易波1, 赵建明1, 徐开凯1   

  1. 1. 电子科技大学电子薄膜与集成器件国家重点实验室, 四川成都 610054;
    2. 中国电科第二十四研究所, 重庆 400060
  • 收稿日期:2020-06-01 修回日期:2020-11-10 出版日期:2021-05-25 发布日期:2021-05-25
  • 作者简介:吴克军 男,1986年生,博士,博士后.主要从事全硅光源器件,光电集成技术以及模拟数字混合集成电路设计的研究. E-mail:kjwu@uestc.edu.cn;李则鹏 男,1998年生,硕士在读.主要从事硅基光源器件、大规模集成电路等方面的研究. E-mail:lizpcd@foxmail.com;徐开凯 男,1984年生,博士,教授.主要从事半导体光电器件与集成技术的研究. E-mail:kaikaix@uestc.edu.cn

Design and Fabrication of a Low Operating Voltage Gate-controlled Silicon Light-Emitting Device in Standard CMOS Process

WU Ke-jun1, LI Ze-peng1, ZHANG Ning1, ZHU Kun-feng2, YI Bo1, ZHAO Jian-ming1, XU Kai-kai1   

  1. 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;
    2. The 24th Research Institute of CETC, Chongqing 400060, China
  • Received:2020-06-01 Revised:2020-11-10 Online:2021-05-25 Published:2021-05-25

摘要: 本文采用0.18μm标准CMOS工艺设计并制备了一种MOS结构的低压栅控硅基发光器件.该光源器件内部采用n+-p+-p+-n+-p+-p+-n+的叉指结构,在相邻两个p+有源区之间覆盖多晶硅栅作为第三端控制电极,用于在源/漏区边缘形成场诱导结,降低p+/n-well结的反向击穿电压,提高器件发光功率.测试结果表明,该光源器件可以发射420nm~780nm的黄色可见光,在3V的正向栅压下,p+/n-well发光二极管的反向击穿电压下降到3V以下,光输出功率提高至2倍以上.本文设计的光源器件工作电压较低,并且与CMOS工艺完全兼容,可以与其他CMOS电路共用电源并且实现单片集成,在硅基光电子集成领域具有一定的应用价值.

关键词: 微电子, 硅基发光二极管, 标准CMOS工艺, 光电集成

Abstract: A MOS-like low operating voltage gate-controlled silicon-based light-emitting device is designed and fabricated using 0.18μm standard CMOS technology.The light emitting device adapts a n+-p+-p+-n+-p+-p+-n+ interdigital structure,in which a poly-Si gate between two adjacent p+ regions working as a third-terminal control electrode was designed.The poly-Si gate is used to produce field-induced junctions at the edge of source/drain region,so as to decrease the breakdown voltage of p+/n-well junction and increase optical power of the device.The measured results indicate that the device can emit yellow visible light with wavelength from 420nm to 780nm.Under forward gate voltage of 3V,the breakdown voltage of p+/n-well junction can be reduced to below 3V,and the optical power can be increased to more than twice.Because of its low operating voltage and full compatibility with CMOS technology,the device can be integrated with other CMOS circuits by using a single power supply,which has certain applications in the field of silicon-based optoelectronic integration.

Key words: microelectronics, Si-LED, standard CMOS process, optoelectronic integration

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