一种基于0.18-μm CMOS工艺的新型超宽频带毫米波混频器设计与分析

doi:10.3969/j.issn.0372-2112.2015.02.031

电子学报 ›› 2015, Vol. 43 ›› Issue (2): 405-411.DOI: 10.3969/j.issn.0372-2112.2015.02.031

一种基于0.18-μm CMOS工艺的新型超宽频带毫米波混频器设计与分析

余振兴, 冯军

东南大学射频与光电集成电路研究所, 江苏南京 210096

收稿日期:2013-09-09 修回日期:2014-04-28 出版日期:2015-02-25
- 作者简介:
- 余振兴 男,1985年出生于湖北荆州.现为东南大学射频与光电集成电路研究所博士研究生,研究方向为射频与毫米波集成电路设计. E-mail:yzx_108@163.com;冯军 女,1953年出生于江苏南京.东南大学信息科学与工程学院教授,博士生导师.主要研究方向为光通信用集成电路设计和光电子集成电路设计. E-mail:fengjun_seu@seu.edu.cn
- 基金资助:
- 国家自然科学基金 (No.2010CB327404)

Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0.18-μm CMOS Technology

YU Zhen-xing, FENG Jun

Institute of RF-& OE-ICs, Southeast University, Nanjing, Jiangsu 210096, China

Received:2013-09-09 Revised:2014-04-28 Online:2015-02-25 Published:2015-02-25
- Supported by:
- National Natural Science Foundation of China (No.2010CB327404)

摘要/Abstract

摘要：

本文提出了一种超宽频带毫米波混频器电路.混频器采用分布式拓扑结构和中频功率合成技术,具有宽带宽和高转换增益.该混频器采用TSMC 0.18-μm CMOS工艺设计并制造,芯片总面积为1.67mm².测试结果表明:混频器工作频率从8GHz到40GHz,中频频率为2.5GHz时的转换增益为-0.2dB至4dB,其本振到中频端口和射频到中频端口间的隔离度均大于50dB.整个电路的直流功耗小于32mW.

关键词: 分布式混频器, 宽中频, 栅注入混频器(GPM), 功率合成, 毫米波(MMW)

Abstract:

An ultra-broadband millimeter wave mixer using 0.18-μm CMOS process is presented in this paper.To achieve better operation bandwidth,a uniform distributed topology is utilized for wideband matching.To enhance the conversion gain of the mixer,an IF power combining amplifier is proposed and implemented in this mixer design.The mixer achieves a wide measured conversion gain of -0.2dB—4dB from 8 to 40GHz.With the low-pass filter,the mixer exhibits excellent LO-to-IF and RF-to-IF isolation which are both better than 50dB.The DC power consumption of the IF amplifier is less than 32mW.

Key words: distributed mixer, wide-IF, gate-pumped mixer (GPM), power combining, millimeter-wave (MMW)

中图分类号:

TN432

余振兴, 冯军. 一种基于0.18-μm CMOS工艺的新型超宽频带毫米波混频器设计与分析[J]. 电子学报, 2015, 43(2): 405-411.

YU Zhen-xing, FENG Jun . Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0.18-μm CMOS Technology[J]. Acta Electronica Sinica, 2015, 43(2): 405-411.

参考文献

[1] Jeng-Han,Pei-Si,Tsai-Wei Huang,et al.A 25-75GHz broadband Gilbert-cell mixer using 90-nm CMOS technology[J].IEEE Microwave and Wireless Components Letter,2007,17(4):247-249.
[2] Jeng-Han Tsaiand Tian-Wei Huang.35-65GHz CMOS broadband modulator and demodulator with sub-harmonic pumping for MMW wireless gigabit applications[J].IEEE Transactions on Microwave Theory and Techniques,2007,55(10):2075-2085.
[3] Jeng-Han Tai.Design of 1.2-V broadband high data-rate MMW CMOS I/Q modulator and demodulator using modified Gilbert-cell mixer[J].IEEE Transactions on Microwave Theory and Techniques,2011,59(5):1350-1360.
[4] Hong-YuanYang,Jeng-Han Tsai,et al.Analysis of a new 33-58-GHz doubly balanced drain mixer in 90-nm CMOS technology[J].IEEE Transactions on Microwave Theory and Techniques,2012,60(4):1057-1068.
[5] Ming-quan Bao,Harald Jacobsson,Lars Aspemyr,et al.A 9-31GHz sub-harmonic passive mixer in 90 nm CMOS technology[J].IEEE Journal of Solid-State Circuits,2006,41(10):2257-2264.
[6] Shih-Kai Lin,Jing-Lin Kuo,Huei Wang.A 60GHz sub-harmonic resistive FET mixer using 0.13 μm CMOS technology[J].IEEE Microwave and Wireless Components Letters,2011,21(10):562-564.
[7] Chung-Ru Wu,Hsieh-Hung Hsieh,Liang-Hung Lu.An ultra-wideband distributed active mixer[J].IEEE Transactions on Microwave Theory and Techniques,2007,55(4):625-632.
[8] Hong-Yuan Yang,Jeng-Han Tsai,Chi-Hsueh Wang,et al.Design and analysis of a 0.8-77.5GHz ultra-broadband distributed drain mixer using 0.13 μm CMOS technology[J].IEEE Transactions on Microwave Theory and Techniques,2009,57(3):562-572.
[9] Jung-Hau Chen,Che-Chung Kuo,Yue-Ming H,et al.A 15-50GHz broadband resistive FET ring mixer using 0.18- μm CMOS technology[A].IEEE Microwave Symposium Digest[C].IEEE,2010.784-787.
[10] Yu Zhenxing,Feng Jun.An ultra-broadband distributed passive gate-pumped mixer in 0.18-μm CMOS[J].Chinese Journal of Semiconductors,2013,34(8):085005-1-085005-7.
[11] D M Pozar.Microwave Engineering[M].New York:Wiley,2012.589-593.

一种基于0.18-μm CMOS工艺的新型超宽频带毫米波混频器设计与分析

Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0.18-μm CMOS Technology

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 6

编辑推荐

Metrics

[1]	姚常飞, 陈振华, 周明, 罗运生, 许从海, 郁建. 基于功率合成技术的75~115GHz六倍频源[J]. 电子学报, 2015, 43(9): 1864-1869.
[2]	尚丽平;廖小春;高扬;邓琥;夏祖学. 一种光导开关线路功率合成方法[J]. 电子学报, 2011, 39(3A): 61-63.
[3]	朱红兵;洪伟;汤红军;陈继新. 紧凑型基片集成波导功率合成放大器研制[J]. 电子学报, 2010, 38(9): 2158-2161.
[4]	骆新江;;杨瑞霞;官伯然;吴景峰;姜霞;. 159W X波段固态空间功率合成放大器[J]. 电子学报, 2009, 37(9): 1961-1964.
[5]	武锦;欧阳思华;李艳奎;阎跃鹏;刘新宇. 一种新型波导基C波段空间功率合成器的设计和实现[J]. 电子学报, 2009, 37(8): 1686-1689.
[6]	褚庆昕, 艾宝强, 雷振亚. 有源集成天线阵的功率合成和波束扫描[J]. 电子学报, 2005, 33(11): 1952-1954.