电子学报 ›› 2015, Vol. 43 ›› Issue (2): 405-411.DOI: 10.3969/j.issn.0372-2112.2015.02.031

• 科研通信 • 上一篇    下一篇

一种基于0.18-μm CMOS工艺的新型超宽频带毫米波混频器设计与分析

余振兴, 冯军   

  1. 东南大学射频与光电集成电路研究所, 江苏南京 210096
  • 收稿日期:2013-09-09 修回日期:2014-04-28 出版日期:2015-02-25
    • 作者简介:
    • 余振兴 男,1985年出生于湖北荆州.现为东南大学射频与光电集成电路研究所博士研究生,研究方向为射频与毫米波集成电路设计. E-mail:yzx_108@163.com;冯 军 女,1953年出生于江苏南京.东南大学信息科学与工程学院教授,博士生导师.主要研究方向为光通信用集成电路设计和光电子集成电路设计. E-mail:fengjun_seu@seu.edu.cn
    • 基金资助:
    • 国家自然科学基金 (No.2010CB327404)

Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0.18-μm CMOS Technology

YU Zhen-xing, FENG Jun   

  1. Institute of RF-& OE-ICs, Southeast University, Nanjing, Jiangsu 210096, China
  • Received:2013-09-09 Revised:2014-04-28 Online:2015-02-25 Published:2015-02-25
    • Supported by:
    • National Natural Science Foundation of China (No.2010CB327404)

摘要:

本文提出了一种超宽频带毫米波混频器电路.混频器采用分布式拓扑结构和中频功率合成技术,具有宽带宽和高转换增益.该混频器采用TSMC 0.18-μm CMOS工艺设计并制造,芯片总面积为1.67mm2.测试结果表明:混频器工作频率从8GHz到40GHz,中频频率为2.5GHz时的转换增益为-0.2dB至4dB,其本振到中频端口和射频到中频端口间的隔离度均大于50dB.整个电路的直流功耗小于32mW.

关键词: 分布式混频器, 宽中频, 栅注入混频器(GPM), 功率合成, 毫米波(MMW)

Abstract:

An ultra-broadband millimeter wave mixer using 0.18-μm CMOS process is presented in this paper.To achieve better operation bandwidth,a uniform distributed topology is utilized for wideband matching.To enhance the conversion gain of the mixer,an IF power combining amplifier is proposed and implemented in this mixer design.The mixer achieves a wide measured conversion gain of -0.2dB—4dB from 8 to 40GHz.With the low-pass filter,the mixer exhibits excellent LO-to-IF and RF-to-IF isolation which are both better than 50dB.The DC power consumption of the IF amplifier is less than 32mW.

Key words: distributed mixer, wide-IF, gate-pumped mixer (GPM), power combining, millimeter-wave (MMW)

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