电子学报 ›› 2019, Vol. 47 ›› Issue (2): 366-373.DOI: 10.3969/j.issn.0372-2112.2019.02.016

• 学术论文 • 上一篇    下一篇

QFP封装互连结构电气特性建模与退化分析

胡家兴, 景博, 黄以锋, 盛增津, 陈垚君, 张钰林   

  1. 空军工程大学航空工程学院, 陕西西安 710038
  • 收稿日期:2018-03-27 修回日期:2018-08-14 出版日期:2019-02-25 发布日期:2019-02-25
  • 作者简介:胡家兴 男,1991年出生,湖南永顺人,博士研究生,研究方向为智能监测与健康状态监控,主要研究电子封装及设备的失效及退化.E-mail:xingjiahu@foxmail.com;景博 女,1965年出生,河北邯郸人,教授/博士生导师,主要研究方向为故障诊断寿命预测、测试性设计与验证、可靠性评估.
  • 基金资助:
    "十三五"装备预研共用技术(No.41402010102)

Electrical Characteristics Modeling and Degradation Analysis of QFP Package Interconnect Structure

HU Jia-xing, JING Bo, HUANG Yi-feng, SHENG Zeng-jin, CHEN Yao-jun, ZHANG Yu-lin   

  1. College of Aeronautics Engineering, Air Force Engineering University, Xi'an, Shaanxi 710038, China
  • Received:2018-03-27 Revised:2018-08-14 Online:2019-02-25 Published:2019-02-25

摘要: 互连结构是电子器件与印刷电路板之间机械固定及电气互联的关键部位.针对当前互连结构退化过程监测困难与表征信号难以提取问题,首先,通过分析QFP封装互连结构的失效模式及机理,建立其退化电气模型.在此基础上,搭建实时监测电路,选取外接电容的充电时间为表征信号,并建立退化电气模型参数与充电时间的关系.然后,利用Multisim软件和开发板模拟并验证等效电气模型参数与充电时间的关联关系.最后,利用小系统试验板进行随机振动试验,研究互连结构退化过程.通过分析充电时间响应,并结合互连结构电镜图发现,充电时间能够较好地表征互连结构的失效过程及失效模式.

关键词: 互连结构, 电气模型, 退化过程, 充电时间, 失效表征

Abstract: The interconnection structure is a key part between the electrical device and the printed circuit board as the mechanical fixing and electrical interconnection.Aiming at the difficulties in real-time monitoring and extracting characterization signals for the health status of interconnects,firstly,a degenerate electrical model was established in this paper,by analyzing the failure modes and mechanisms of the QFP interconnect structure.Then,according to the degraded electrical model of the interconnect structure,a real-time monitoring circuit was built,with the charging time of the external capacitor selected as the characterization signal,and the relationship between the electrical parameters of the degradation model and the charging time was established.Afterwards,the Multisim and the development board had been used to simulate and verify the relationship between the equivalent electrical model parameters and the charging time in the degradation process of the interconnect structure.Finally,in order to analyze the degradation process of interconnects,a small system test board was used for random vibration test.From the results,combined with the electron microscope image of the interconnect structure,it was found that the charge time can characterize the failure process and failure mode of the interconnect structure well.

Key words: interconnect structure, electrical model, degradation process, charging time, failure characterization

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