基于磷钝化栅介质的1.2kV 4H-SiC DMOSFET
刘佳佳, 刘英坤, 谭永亮, 张力江, 崔玉兴
1.2kV 4H-SiC DMOSFET with Phosphorous Passivated Gate Dielectric
LIU Jia-jia, LIU Ying-kun, TAN Yong-liang, ZHANG Li-jiang, CUI Yu-xing
电子学报
.
2018, (8): 2026
-2029
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DOI: 10.3969/j.issn.0372-2112.2018.08.031
