漂移区为线性掺杂的高压薄膜SOI器件的研制

张盛东;韩汝琦;Tommy Lai;Johnny Sin

Development of High Voltage Thin Film SOI Device with Linearly Doped Drift Region

ZHANG Sheng-dong;HAN Ru-qi;Tommy Lai;Johnny Sin

电子学报 . 2001, (2): 164 -167 .