全耗尽SOIMOSFET辐照导致的阈值电压漂移模型

万新恒;张兴;谭静荣;高文钰;黄如;王阳元

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

WAN Xin-heng;ZHANG Xing;TAN Jing-rong;GAO Wen-yu;HUANG Ru;WANG Yang-yuan

电子学报 . 2001, (11): 1519 -1521 .