改进击穿电压和导通电阻折中性能的线性变化掺杂漂移区RESURFLDMOS晶体管
何 进;张 兴;黄 如;林晓云;何泽宏
Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance
HE Jin;ZHANG Xing;HUANG Ru;LING Xiao-yun;HE Zhe-hong
电子学报 . 2002, (2): 298 -300 .