质子辐照对场板AlGaN/GaN HEMT器件电特性的影响
谷文萍, 张林, 杨鑫, 全思, 徐小波, 杨丽媛, 刘盼芝
The Effect of Proton Irradiation on the Electrical Properties of FP-AlGaN/GaN High Electron Mobility Transistors
GU Wen-ping, ZHANG Lin, YANG Xin, QUAN Si, XU Xiao-bo, YANG Li-yuan, LIU Pan-zhi
电子学报
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2016, (6): 1445
-1449
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DOI: 10.3969/j.issn.0372-2112.2016.06.027
